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| MMBD4148 Elektronische Bauelemente RoHS Compliant Product Surface Mount Switching Diode FEATURES A suffix of "-C" specifies halogen & lead-free A L 3 1 * * * * Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 3 Top View 2 BS V 1 ANODE G C 3 CATHODE 1 2 D H K J MAXIMUM RATINGS Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 300 500 Unit Vdc mAdc mAdc SOT-23 Dim A B C D G H J K L S V Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 325 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 - 55 to +150 Unit mW mW/C C/W mW mW/C C/W C All Dimension in mm DEVICE MARKING MMBD4148 = 5D, KA2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR- 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR -- -- CT VF trr -- -- -- 25 5.0 4.0 1.25 4.0 nAdc 75 -- Vdc mAdc pF Vdc ns 0.062 in. 0.024 in. 99.5% alumina. http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 MMBD4148 Elektronische Bauelemente Surface Mount Switching Diode 820 +10 V 2.0 k 100 H 0.1 F DUT 50 Output Pulse Generator 50 Input Sampling Oscilloscopes VR Input Signal 90% IR IR(REC) = 1.0 mA Output Pulse (IF = IR = 10 mA; Measured at IR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit 100 TA = 85C I F, Forward Current (mA) 10 10 TA = 150C TA = -40C IR , Reverse Current (A) 1.0 TA = 125C TA = 25C 1.0 0.1 TA = 85C TA = 55C 0.01 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, Forward Voltage (V) 0.001 0 10 20 30 40 50 VR, Reverse Voltage (V) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD , Diode Capacitance (pF) 0.64 0.60 0.56 0.52 0 2.0 4.0 VR, Reverse Voltage (V) 6.0 8.0 Figure 4. Capacitance http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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